Physics and Technology of Silicon Carbide Devices

Silicon Carbide Devices is definitely the most popular semiconductor material for power devices. On the contrary, Si-based power equipment approaches its material limits, which have led to many attempts to find alternatives to Si-based power equipmen... Read more

Silicon Carbide Devices is definitely the most popular semiconductor material for power devices. On the contrary, Si-based power equipment approaches its material limits, which have led to many attempts to find alternatives to Si-based power equipment for better performance. With the rapid developments and innovations in the semiconductor industry, Silicon Carbide (SiC) power plants have moved from immature prototypes in laboratories to a practical substitute for Si-based power plants in high-performance and high-efficiency applications. SiC devices have many convincing advantages-high breakdown voltage, high frequency switching, high operating temperature, high electric field and low losses. Silicon Carbide (SiC) equipment belongs to the so-called broad-band semiconductor group, which offers a selection of attractive features for high-voltage power semiconductors compared to commonly used silicon (Si). Some SiC power devices such as Schottky barrier diodes (SBDs), metal-oxide-semiconductor field effect transistors (MOSFETs), FET junctions (JFETs) and their integrated modules have recently been launched on the market. Physics and Technology of Silicon Carbide Devices covers up-to-date methods and techniques in the manufacturing, modeling, characterization, processing technologies, etc. for Carbide Silicon Devices. Less